You are here Substrate noise thesis. To this end, feeding the engineering intuition about substrate noise coupling is critical. In this thesis a circuit simulation methodology is developed taking all the physical effects of the substrate noise propagation and impact mechanism into account.
Substrate noise coupling in integrated circuits is the process by which interference signals generated by high speed digital blocks cause parasitic currents to flow in the silicon substrate and couple devices in various parts of the circuits on this common substrate.
In RFIC the switching noise couples to the sensitive analog circuits through the substrate causing degradation in performance and yield hit.
Overcoming substrate coupling is a key issue in successful "system on chip" integration. In this thesis a substrate aware design flow is built, calibrated to silicon and used as part of the design flow to uncover substrate coupling problems in RFICs in the design phase.
The flow is used to develop the first comprehensive RF substrate noise isolation design guide to be used by RF designers during the design phase. This will allow designers to optimize the design to maximize noise isolation and protect sensitive blocks from being degraded by substrate noise coupling.
Several effects of substrate coupling on circuit performance will be identified and remedies will be given based on the design guide. Three case studies are designed to analyze the substrate coupling problem in RFICs. The case studies are designed to attack the problem from the device, circuit and system levels.
On the device level a special emphasis is given to designing on chip inductors as an important device in RFIC. An accurate model is developed for a broadband fit of the inductor scattering parameters. This model is shown to be scalable and is proven to be accurate across various frequency bands and geometries.
A special emphasis is put on the design for manufacturing effects that affect the design robustness. A circuit level case study is developed and results are compared to simulations and measurements to highlight the need for such a flow before tapping out to ensure a yielding part.
The system level problem studied is a GSM receiver where the research results are directly applied to it as a demonstration vehicle to debug and resolve a system level substrate noise coupling problem that otherwise caused a product to be on the edge of malfunction.First, the substrate noise model is compact and, although ac- curate, it can be translated into a single noise signa- ture which is unique for a given digital component and hence it .
CHARACTERIZATION AND MODELING OF HOT-CARRIER DEGRADATION IN SUB-MICRON NMOSFETS By Manish Prabhakar Pagey Thesis Decrease in noise margins because the threshold voltage and the subthreshold slope do not scale, and SUBSTRATE Oxide Channel Hot-Carrier Injection Current.
a substrate, a k-band oscillator proof of concept has been designed, fabricated, and tested. The oscillator is comprised of a low noise active transistor device, an embedded k-band dielectric resonator and a passive transmission line load network. FACULTY OF SCIENCE UNIVERSITY OF COPENHAGEN PhD thesis Morten Hannibal Madsen Indium Arsenide Nanowires Fabrication, Characterization, and Biological Applications.
Noise biology focuses on the sources, processing, and biological consequences of the inherent stochastic fluctuations in molecular transitions or interactions that control cellular behavior.
These fluctuations are especially pronounced in small systems where the magnitudes of the fluctuations. Substrate interferences present in the sources of cascode transistors M23 and M26 will be also present at their gates such that gate source voltages of the same transistors can be considered constant for HF substrate noise .